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Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon

Author: Indrasen Bhattacharya
Publisher: Berkeley, CA : University of California, Berkeley, 2017.
Dissertation: Ph. D. in Applied Science and Technology University of California, Berkeley 2017
Edition/Format:   Thesis/dissertation : Document : Thesis/dissertation : eBook   Computer File : English
Summary:
III-V optoelectronic device integration in a CMOS post-process compatible manner is important for the intimate integration of silicon-based electronic and photonic integrated circuits. The low temperature, self-catalyzed growth of high crystalline quality Wurtzite-phase InP nanopillars directly on silicon presents a viable approach to integrate high performance nano-optoelectronic devices. For the optical  Read more...
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Details

Genre/Form: Dissertations, Academic
Academic theses
Material Type: Document, Thesis/dissertation, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Indrasen Bhattacharya
OCLC Number: 1066229665
Description: 1 online resource (194 pages)
Responsibility: Bhattacharya, Indrasen.

Abstract:

III-V optoelectronic device integration in a CMOS post-process compatible manner is important for the intimate integration of silicon-based electronic and photonic integrated circuits. The low temperature, self-catalyzed growth of high crystalline quality Wurtzite-phase InP nanopillars directly on silicon presents a viable approach to integrate high performance nano-optoelectronic devices. For the optical transmitter side of the photonic link, InGaAs quantum wells have been grown in a core-shell manner within InP nanopillars. Position-controlled growth with varying pitch is used to systematically control emission wavelength across the same growth substrate. These nanopillars have been fabricated into electrically-injected quantum well in nanopillar LEDs operating within the silicon transparent 1400-1550 nm spectral window and efficiently emitting micro-watts of power. A high quality factor (Q ~ 1000) undercut cavity quantum well nanolaser is demonstrated, operating in the silicon-transparent wavelength range up to room temperature under optical excitation. We also demonstrate an InP nanopillar phototransistor as a sensitive, low-capacitance photoreceiver for the energy-efficient operation of a complete optical link. Efficient absorption in a compact single nanopillar InP photo-BJT leads to a simultaneously high responsivity of 9.5 A/W and high 3dB-bandwidth of 7 GHz. For photovoltaic energy harvesting, a sparsely packed InP nanopillar array can absorb ~90% of the incident light because of the large absorption cross section of these near-wavelength nanopillars. Experimental data based on wavelength and angle resolved integrating sphere measurements will be presented to discuss the nearly omnidirectional absorption properties of these nanopillar arrays.

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<http://www.worldcat.org/oclc/1066229665> # Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon
    a bgn:Thesis, schema:CreativeWork, schema:Book, schema:MediaObject, pto:Web_document ;
    bgn:inSupportOf "" ;
    library:oclcnum "1066229665" ;
    library:placeOfPublication <http://id.loc.gov/vocabulary/countries/cau> ;
    schema:author <http://experiment.worldcat.org/entity/work/data/5569389437#Person/bhattacharya_indrasen> ; # Indrasen Bhattacharya
    schema:datePublished "2017" ;
    schema:description "III-V optoelectronic device integration in a CMOS post-process compatible manner is important for the intimate integration of silicon-based electronic and photonic integrated circuits. The low temperature, self-catalyzed growth of high crystalline quality Wurtzite-phase InP nanopillars directly on silicon presents a viable approach to integrate high performance nano-optoelectronic devices. For the optical transmitter side of the photonic link, InGaAs quantum wells have been grown in a core-shell manner within InP nanopillars. Position-controlled growth with varying pitch is used to systematically control emission wavelength across the same growth substrate. These nanopillars have been fabricated into electrically-injected quantum well in nanopillar LEDs operating within the silicon transparent 1400-1550 nm spectral window and efficiently emitting micro-watts of power. A high quality factor (Q ~ 1000) undercut cavity quantum well nanolaser is demonstrated, operating in the silicon-transparent wavelength range up to room temperature under optical excitation. We also demonstrate an InP nanopillar phototransistor as a sensitive, low-capacitance photoreceiver for the energy-efficient operation of a complete optical link. Efficient absorption in a compact single nanopillar InP photo-BJT leads to a simultaneously high responsivity of 9.5 A/W and high 3dB-bandwidth of 7 GHz. For photovoltaic energy harvesting, a sparsely packed InP nanopillar array can absorb ~90% of the incident light because of the large absorption cross section of these near-wavelength nanopillars. Experimental data based on wavelength and angle resolved integrating sphere measurements will be presented to discuss the nearly omnidirectional absorption properties of these nanopillar arrays."@en ;
    schema:exampleOfWork <http://worldcat.org/entity/work/id/5569389437> ;
    schema:genre "Academic theses"@en ;
    schema:genre "Dissertations, Academic"@en ;
    schema:inLanguage "en" ;
    schema:name "Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon"@en ;
    schema:productID "1066229665" ;
    schema:url <http://digitalassets.lib.berkeley.edu/etd/ucb/text/Bhattacharya_berkeley_0028E_17505.pdf> ;
    wdrs:describedby <http://www.worldcat.org/title/-/oclc/1066229665> ;
    .


Related Entities

<http://experiment.worldcat.org/entity/work/data/5569389437#Person/bhattacharya_indrasen> # Indrasen Bhattacharya
    a schema:Person ;
    schema:familyName "Bhattacharya" ;
    schema:givenName "Indrasen" ;
    schema:name "Indrasen Bhattacharya" ;
    .

<http://www.worldcat.org/title/-/oclc/1066229665>
    a genont:InformationResource, genont:ContentTypeGenericResource ;
    schema:about <http://www.worldcat.org/oclc/1066229665> ; # Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon
    schema:dateModified "2019-04-15" ;
    void:inDataset <http://purl.oclc.org/dataset/WorldCat> ;
    .


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