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Nanoscale transistors : device physics, modeling and simulation

Author: Mark Lundstrom; Jing Guo
Publisher: New York : Springer, ©2006.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:
"Nanoscale transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanostransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors."  Read more...
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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Mark Lundstrom; Jing Guo
ISBN: 9780387280028 0387280022 0387280030 9780387280035
OCLC Number: 61756769
Description: vi, 217 pages : illustrations ; 24 cm
Contents: 1.2 Distribution functions 1 --
1.3 3D, 2D, and 1D Carriers 3 --
1.4 Density of states 7 --
1.5 Carrier densities 8 --
1.6 Directed moments 10 --
1.7 Ballistic transport: semiclassical 12 --
1.8 Ballistic transport: quantum 16 --
1.9 The NEGF formalism 21 --
1.10 Scattering 25 --
1.11 Conventional transport theory 26 --
1.12 Resistance of a ballistic conductor 31 --
1.13 Coulomb blockade 33 --
2) Devices, Circuits and Systems 39 --
2.2 The MOSFET 40 --
2.3 1D MOS Electrostatics 45 --
2.4 2D MOS Electrostatics 54 --
2.5 MOSFET Current-Voltage Characteristics 61 --
2.6 The bipolar transistor 67 --
2.7 CMOS Technology 69 --
2.8 Ultimate limits 75 --
3) The Ballistic Nanotransistors 83 --
3.2 Physical view of the nanoscale MOSFETs 86 --
3.3 Natori's theory of the ballistic MOSFET 91 --
3.4 Nondegenerate, degenerate, and general carrier statistics 94 --
3.4.1 The ballistic MOSFET (nondegenerate conditions) 94 --
3.4.2 The ballistic MOSFET (T[subscript L] = 0, degenerate conditions) 97 --
3.4.3 The ballistic MOSFET (general conditions) 103 --
3.5 Beyond the Natori model 105 --
3.5.1 Role of the quantum capacitance 105 --
3.5.2 Two dimensional electrostatics 108 --
4) Scattering Theory of the MOSFET 115 --
4.2 MOSFET physics in the presence of scattering 117 --
4.3 The scattering model 120 --
4.4 The transmission coefficient under low drain bias 126 --
4.5 The transmission coefficient under high drain bias 129 --
5) Nanowire Field-Effect Transistors 140 --
5.2 Silicon nanowire MOSFETs 140 --
5.2.1 Evaluation of the I-V characteristics 143 --
5.2.2 The I-V characteristics for nondegenerate carrier statistics 143 --
5.2.3 The I-V characteristics for degenerate carrier statistics 145 --
5.2.4 Numerical results 147 --
5.3 Carbon nanotubes 153 --
5.4 Bandstructure of carbon nanotubes 155 --
5.4.1 Bandstructure of graphene 155 --
5.4.2 Physical structure of nanotubes 158 --
5.4.3 Bandstructure of nanotubes 160 --
5.4.4 Bandstructure near the Fermi points 165 --
5.5 Carbon nanotube FETs 169 --
5.6 Carbon nanotube MOSFETs 171 --
5.7 Schottky barrier carbon nanotube FETs 173 --
6) Transistors at the Molecular Scale 182 --
6.2 Electronic conduction in molecules 183 --
6.3 General model for ballistic nanotransistors 187 --
6.4 MOSFETs with 0D, 1D, and 2D channels 193 --
6.5 Molecular transistors? 196 --
6.6 Single electron charging 199 --
6.7 Single electron transistors 203.
Responsibility: Mark S. Lundstrom, Jing Guo.
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Abstract:

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.  Read more...

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