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Narrow gap semiconductors 2007 : proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK

Author: B N Murdin; S K Clowes
Publisher: Dordrecht ; Bristol : Springer Verlag in association with Canopus, ©2008.
Series: Springer proceedings in physics, 119.
Edition/Format:   eBook : Document : Conference publication : EnglishView all editions and formats
Summary:
Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other  Read more...
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Genre/Form: Electronic books
Conference papers and proceedings
Congresses
Additional Physical Format: Print version:
International Conference on Narrow-Gap Semiconductors and Related Materials (13th : 2007 : Guildford, England).
Narrow gap semiconductors 2007.
Dordrecht ; Bristol : Springer Verlag in association with Canopus, ©2008
(DLC) 2008924325
(OCoLC)227032806
Material Type: Conference publication, Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: B N Murdin; S K Clowes
ISBN: 9781402084256 1402084250 1402084242 9781402084249
OCLC Number: 311495492
Description: 1 online resource (xvi, 215 pages) : illustrations.
Contents: Spin-Related Phenomena --
Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well --
Photogalvanic Effects in HgTe Quantum Wells --
Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers --
Control and Probe of Carrier and Spin Relaxations in InSb Based Structures --
Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells --
Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In, Mn)As/GaSb Heterostructures --
Temperature Dependence of the Electron Lande g-Factor in InSb --
Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix --
Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells --
Growth, Fabrication, Characterisation and Theory --
Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulses --
Band Structure of InSbN and GaSbN --
Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications --
Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distribution --
InMnAs Quantum Dots: A Raman Spectroscopy Analysis --
Conduction Band States in AlP/GaP Quantum Wells --
Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy --
Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE --
Epitaxial Growth and Characterization of PbGeEuTe Layers --
Monte Carlo Simulation of Electron Transport in PbTe --
L-Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum Dots --
Antimony Distribution in the InSb/InAs QD Heterostructures --
Transport Properties of InAs0.1Sb0.9 Thin Films Sandwiched by Al0.1In0.9Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy --
Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation --
Monte Carlo Study of Transport Properties of InN --
New Type of Combined Resonance in p-PbTe --
Carbon Nanotubes and Graphene --
Theory of Third-Order Optical Susceptibility of Single-Wall Carbon Nanotubes With Account of Coulomb Interaction --
Unveiling the Magnetically Induced Field-Effect in Carbon Nanotubes Devices --
Transient Zitterbewegung of Electrons in Graphene and Carbon Nanotubes --
Cross-Polarized Exciton Absorption in Semiconducting Carbon Nanotubes --
Nanocrystals and Nanowires --
Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3-4?m --
InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes --
Electronic Devices --
Performance Evaluation of Conventional Sb-based Multiquantum Well Lasers operating above 3?m at Room Temperature --
Electroluminescence From Electrically Pumped GaSb-Based VCSELs --
Wavelength Tunable Resonant Cavity Enhanced Photodetectors Based on Lead-Salts Grown by MBE --
Farfield Measurements of Y-Coupled Quantum Cascade Lasers --
Impact of Doping Density in Short-Wavelength InP-Based Strain-Compensated Quantum-Cascade Lasers --
Magnetic Field Effects in InSb/AlxIn1?xSb Quantum-Well Light-Emitting Diodes --
Electroluminescence From InSb-Based Mid-Infrared Quantum Well Lasers --
InAs Quantum Hot Electron Transistor --
Easy-to-Use Scalable Antennas for Coherent Detection of THz Radiation --
Single Photon Detection in the Long Wave Infrared --
High-Performance Fabry-Perot and Distributed-Feedback Interband Cascade Lasers --
Mid-Infrared Lead-Salt VECSEL (Vertical External Cavity Surface Emitting Laser) for Spectroscopy --
Optically Pumped GaSb-Based VECSELs --
Magneto-Transport and Magneto-Optics --
Cyclotron Resonance Photoconductivity of a Two-Dimensional Electron Gas in HgTe Quantum Wells --
Extrinsic Electrons and Carrier Accumulation in AlxIn1?xSb/InSb Quantum Wells: Well-Width Dependence --
Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped AlxIn1?xSb/InSb Quantum Wells --
Semimetal-Insulator Transition in Two-Dimensional System at the Type II Broken-Gap InAs/GalnAsSb Single Heterointerface --
Magnetoexcitons in Strained InSb Quantum Wells.
Series Title: Springer proceedings in physics, 119.
Responsibility: B.N. Murdin, S.K. Clowes, (eds.).

Abstract:

The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon  Read more...

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