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Neutron-Transmutation-Doped Silicon

Author: Jens Guldberg
Publisher: Boston, MA : Springer US, 1981.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and  Read more...
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Additional Physical Format: Version imprimée :
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Jens Guldberg
ISBN: 9781461332619 1461332613
OCLC Number: 1035111805
Description: 1 ressource en ligne (XII, 506 pages) : 84 illustrations
Contents: 1: General Subjects --
Neutron Doped Silicon --
A Market Review (Invited) --
Large Scale Production of NTD-Silicon in The United States (Invited) --
2: Radiation Defects --
Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device Performance (Invited) --
Electrical Property Studies of Oxygen in Czochralski-Grown Neutron-Transmutation-Doped Silicon (Invited) --
Impurity Interactions with Structural Defects in Irradiated Silicon (Invited) --
Defect Production During Neutron Doping of Si (Invited) --
Wafer Stability. A Comparison of NTD-Silicon with Conventional FZ --
Electron Spin Resonance (ESR) Study on The Thermal Annealing of Defects Induced in Neutron Transmutation Doped Silicon --
Optical Studies of Lattice Damage in Neutron-Transmutation-Doped Silicon --
A Facility and Program at IPNS to Study Defects Produced by Fast Neutrons in Semiconductors --
Defects in Neutron-Irradiated Extrinsic P-Type Silicon --
3. Irradiation Technology --
The Health and Safety Aspects of Neutron Doped Silicon (Invited) --
Precision and Accuracy of NTD Silicon Production Based on Calorimetric Neutron Dose Control --
The Selection of Starting Material for Neutron-Transmutation Doped Silicon --
The Optimisation of Nuclear Parameters used for Silicon Irradiation in the Harwell Research Reactors --
Factors Affecting Phosphorus Production Rate in NTD Silicon --
Neutron Doped Silicon in Grenoble Reactor Facilities --
Characterization of NTD Silicon Irradiated in Grenoble Reactor Facilities --
A Preliminary Study on NTD-Silicon --
Development of the Irradiation Facilities for Silicon Neutron Doping in France --
Neutron Transmutation Doping of Silicon Slices --
4. Device Design --
Characterization of Unijunction Transistors Fabricated on NTD-Silicon (Invited) --
NTD Silicon Behaviour During Diffusion Heat Treatment and High Power Devices Optimization (Invited) --
An Optimization of Blocking Characteristics of High Voltage Thyristors using NTD Crystal --
The Fabrication and Characterization of Spreading Resistance Temperature Sensors using NTD Silicon (Invited) --
5. Characterization --
Characterization of NTD Silicon Crystals by The Photoluminescence Technique (Invited) --
Precision Resistivity Measurements on NTD-Silicon --
Photoluminescence Analysis of NTD-Silicon --
Quantitative Determination of B and P In Silicon by IR Spectroscopy --
6. Special Topics --
Extrinsic NTD Silicon for Infrared Applications (Invited) --
Impurity Doping and Isolation Processing by High Energy Electron Beam (Invited) --
Application of NTD Silicon for Radiation Detector of Surface Barrier Type --
Neutron Transmutation Doping of GaAs --
Participants.
Responsibility: edited by Jens Guldberg.

Abstract:

This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe­ rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

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