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Operation and modeling of the MOS transistor

Author: Yannis Tsividis
Publisher: Boston : WCB/McGraw-Hill, ©1999.
Edition/Format:   Print book : English : 2a edView all editions and formats
Summary:
"Extensively revised and updated, this, the second edition of the text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor - the key element of most modern microelectronic chips."--BOOK JACKET.
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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Yannis Tsividis
ISBN: 0070655235 9780070655232
OCLC Number: 970411930
Description: xx, 620 pages : il. ; 24 cm
Contents: 1. Semiconductors, Junctions, and MOSFET Overview --
2. The Two-Terminal MOS Structure --
3. The Three-Terminal MOS Structure --
4. The Four-Terminal MOS Transistor --
5. MOS Transistors with Ion-Implanted Channels --
6. Small-Dimension Effects / D. Antoniadis --
7. The MOS Transistor in Dynamic Operation --
Large-Signal Modeling --
8. Small-Signal Modeling for Low and Medium Frequencies --
9. High-Frequency Small-Signal Models --
10. MOSFET Modeling for Circuit Simulation --
Appendices A. Energy Bands and Related Concepts --
Appendices B. Basic Laws of Electrostatics in One Dimension --
Appendices C. Charge Density, Electric Field, and Potential in the pn Junction --
Appendices D. Energy Band Diagrams for the Two-Terminal MOS Structure --
Appendices E. Charge Density, Electric Field, and Potential in the Two-Terminal MOS Structure --
Appendices F. General Analysis of the Two-Terminal MOS Structure --
Appendices G. Careful Definitions for the Limits of Moderate Inversion --
Appendices H. Energy Band Diagrams for the Three-Terminal MOS Structure --
Appendices I. General Analysis of the Three-Terminal MOS Structure --
Appendices J. Drain Current Formulation Using Quasi-Fermi Potentials --
Appendices K. Results of a Detailed Formulation for the Drain Current and Drain Small-Signal Conductance in the Saturation Region --
Appendices L. Evaluation of the Intrinsic Transient Source and Drain Currents --
Appendices M. Charges for the Accurate Strong-Inversion Model --
Appendices N. Quantities Used in the Derivation of the Non-Quasi-Static y-Parameter Model.
Responsibility: Yannis Tsividis.
More information:

Abstract:

"Extensively revised and updated, this, the second edition of the text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor - the key element of most modern microelectronic chips."--BOOK JACKET.

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