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The Physics of submicron structures

Author: Harold L Grubin
Publisher: New York : Plenum Press, ©1984.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
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Genre/Form: Conference papers and proceedings
Congresses
Additional Physical Format: Online version:
Physics of submicron structures.
New York : Plenum Press, ©1984
(OCoLC)610213322
Material Type: Conference publication
Document Type: Book
All Authors / Contributors: Harold L Grubin
ISBN: 0306417154 9780306417153
OCLC Number: 10779872
Notes: "Proceedings of a workshop on the physics of submicron structures, held June 28-30, 1982, at Allerton House, University of Illinois, Urbana-Champaign, Illinois"--Title page verso.
Description: x, 360 pages : illustrations ; 26 cm
Contents: Quantum-Well and Superlattice Lasers: Fundamental Effects.- n-i-p-i Doping Superlattices-Semiconductors with Tunable Electronic Properties.- Tunneling Phenomena in Multibarrier Structures.- Enhancement of the Ionization Rates Ratio by Spatial Separation of Electrons and Holes in Multilayer Heterojunction Structures: Towards a Solid State Photomultiplier.- Two-Dimensional Electron GAS FET (TEGFET).- Physics and Modeling Considerations for VLSI Devices.- Design Considerations for Submicron-Scale GaAs MESFETs.- Millimeter IMPATT Diodes.- A Dynamic Monte Carlo Simulation of Conduction in Submicron GaAs Devices at 77K.- Monte Carlo Simulation of Electron Dynamics in Mos Inversion Channels.- Performance of Submicron Silicon MOSFETs Fabricated by Edge-Defined Vertical-Etch Technique.- Modeling of Surface Scattering in the Monte Carlo Simulation of Short Channel MOSFET.- Generation of Interface States and Charge Trapping in MOSFETs.- High Field Surface Drift Velocities in Silicon.- Phonons in Confined Geometries.- Monte Carlo Simulation of Space-Charge Injection FET.- Ensemble Monte Carlo Studies of High Field Spikes and Planar Doped Barrier Devices.- Self-Consistent Particle-Field Monte Carlo Simulation of Semiconductor Microstructures.- Electron Distribution Function in GaAs for High and Low Electric Fields.- Monte Carlo Simulations of Ballistic Structures.- Noise Considerations in Submicron Devices.- Ballistic Transport and Velocity Overshoot in Photoconductive Submicron Structures.- Impact Ionization Coefficients in InP Determined by Analysis of Photocurrent and Noise Measurements.- Radiative Decay of Surface Plasmons on Nonspherical Silver Particles.- A Jet-Stream Solution for the Current In Planar-Doped-Barrier Devices.- The Validity of the Drift-Diffusion Equation in Small Semiconductor Devices.- High-Field Transport in GaAs, InP and InxGa1-xAsyP1-y.- Proposal for a Terahertz Zener Oscillator.- Considerations on the Finite, Very-Small Semiconductor Device and Superlattice Arrays.- A Wigner Function Approach to Transport and Switching in Sub-Micron Heterostructures.- The Electron Diffusion Transistor (A Proposed New Transistor Structure).- Point Contact Spectroscopy of Scattering Rates on Semiconductors.- Lateral Superlattices for MM-Wave and Microelectronic Applications.- Improved Device Physics for Calculating the Gain of Bipolar Structures in Silicon.- Generalized Semiconductor Device Modeling Based on Maxwell Theory and Stream Functions.- Low Field Mobility, Effective Saturation Velocity and Performance of Submicron GaAs MESFETs.- Multi-Layered Heterojunction Structure for Millimeter Wave Sources.- Boundary Scattering Effects in High Field Transport in Submicron Structures.- Ballistic and Dissipative Effects in Barrier-Limited Current Transport.- Contributors.
Other Titles: Submicron structures
Responsibility: edited by H.L. Grubin [and others].

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