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Rad-hard semiconductor memories

Autor: Cristiano Calligaro; Umberto Gatti
Editora: Gistrup, Denmark : River Publishers, [2018]
Séries: River Publishers series in electronic materials and devices.
Edição/Formato   e-book : Documento : InglêsVer todas as edições e formatos
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Gênero/Forma: Electronic books
Formato Físico Adicional: Print version:
Calligaro, Cristiano
Rad-Hard Semiconductor Memories
Aalborg : River Publishers,c2018
Tipo de Material: Documento, Recurso Internet
Tipo de Documento Recursos de internet, Arquivo de computador
Todos os Autores / Contribuintes: Cristiano Calligaro; Umberto Gatti
ISBN: 8770220190 9788770220194
Número OCLC: 1078997249
Descrição: 1 online resource (418 p.).
Conteúdos: Front Cover; Half Title Page; RIVER PUBLISHERS SERIES IN ELECTRONIC MATERIALS AND DEVICES; Title Page --
Rad-hard Semiconductor Memories; Copyright Page; Dedication Page; Contents; Preface; Acknowledgements; List of Contributors; List of Figures; List of Tables; List of Abbreviations; Chapter 1 --
Space Radiation Effects in Electronics; 1.1 Space Radiation Environment; 1.1.1 The Sun; 1.1.2 The Sunspot Cycle; 1.1.3 Solar Flares and Coronal Mass Ejections; 1.1.4 Trapped Particles --
Van Allen Belts; 1.1.5 South Atlantic Anomaly; 1.1.6 Galactic Cosmic Rays; 1.1.7 Space Weather 1.1.8 Atmospheric and Ground-Level Radiation Environments1.1.9 Cosmic Rays; 1.1.10 Radionuclides in the Soil; 1.1.11 Thermal Neutrons; 1.1.12 Artificial Radiation Sources; 1.2 Radiation Effect in Materials and Devices; 1.2.1 Energetic Charged Particles and Matter; 1.2.2 Stopping Nomenclature; 1.2.3 General Theory for Electronic Stopping; 1.2.4 Stopping Theories and Semi-Empirical Models; 1.2.5 Nuclear Stopping Force; 1.2.6 Ion-induced Nuclear Reactions; 1.3 Radiation Effects in Semiconductors; 1.3.1 Generation of Electron-Hole Pairs; 1.3.2 Nuclear Reactions 1.3.3 Linear Energy Transfer vs. Electronic Stopping Force1.3.4 Spatially Restricted LET; 1.3.5 Energy Loss Straggling; 1.3.6 Applicability of LET; 1.3.7 Prediction Tools for Stopping Force; 1.3.8 Cumulative Effect: Total Ionizing Dose and Displacement Damage; 1.3.9 Single Event Effects; 1.3.10 Soft Errors; 1.3.11 Hard Errors; 1.4 Effect of Radiation on Memory Devices; 1.4.1 Structure of a Memory; 1.4.2 Classification and Fault Mechanisms in Memories; 1.4.3 Memory Accelerated Tests; 1.4.4 Test Methods; 1.4.5 Static Mode Testing; 1.4.6 Dynamic Mode Testing 1.5 Radiation Hardness Assurance Testing1.5.1 Beam Requirements; 1.5.2 TID Tests; 1.5.3 TNID Tests; 1.5.4 SEE Tests; 1.5.5 Sample Preparation; 1.5.6 TID Tests; 1.5.7 SEE Tests; 1.5.8 Radiation Facilities; 1.5.9 ESA European Component Irradiation Facilities (ECIF); 1.5.10 Other Outstanding European Facilities; 1.5.11 Other Outstanding Facilities in the World; 1.5.12 Accelerated Test for Memories; 1.5.13 Memory Test Setup; 1.5.14 Notes on Test Result Analysis; 1.6 Conclusion; References; Chapter 2 --
RHBD Techniques for Memories; 2.1 Effect of HEPs on Semiconductor Devices 2.2 Cumulative Effect: TID2.3 Single Event Latch-up: SEL; 2.4 Single Event Upset: SEU; 2.5 From SET to SEU/SEFI/MBU: When a Disturbance Becomes an Error; 2.6 Radiation Hardening By Design (RHBD); 2.7 RHBD at Architectural Level; 2.8 RHBD at Circuit Level; 2.9 RHBD at Layout Level; Conclusion; References; Chapter 3 --
Rad-hard SRAMs; 3.1 SRAM Foundations: Single Port and Multiple Port; 3.2 Synchronous or Asynchronous?; 3.3 SRAM Architectures; 3.4 Embedded SRAMs; 3.5 SRAMs' Building Blocks...Rad-hard of Course; 3.5.1 Input Buffers and ATDs; 3.5.2 DEMUXs; 3.5.3 Sensing 3.6 ECC Foundations: The Hamming Code
Título da Série: River Publishers series in electronic materials and devices.
Responsabilidade: editors, Cristiano Calligaro, Umberto Gatti.

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