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Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect

Author: Jie Cheng
Publisher: Singapore : Springer, [2018] ©2018
Series: Springer theses.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Cheng, Jie.
Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect.
Singapore : Springer, [2018]
(OCoLC)994640388
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Jie Cheng
ISBN: 9789811061653 9811061653
OCLC Number: 1003317457
Notes: "Doctoral thesis accepted by Tsinghua University, Beijing, China."
Description: 1 online resource
Contents: Supervisor's Foreword; Preface; Acknowledgements; Contents; Abbreviations; 1 Introduction; 1.1 Development of Ultra-Large Scale Integrated Circuit; 1.1.1 Sub-14 Nm Technology Node; 1.1.2 The Application of New Materials for Interconnects; 1.2 Ru as Novel Diffusion Barrier; 1.2.1 Novel Barrier Materials; 1.2.2 Properties of Ru; 1.2.3 Preparation of Ru as Barrier Film; 1.3 Chemical Mechanical Polishing (CMP); 1.3.1 Introduction of CMP Technology; 1.3.2 CMP of BEOL; 1.3.3 Challenges for CMP in Sub-14 Nm Technology Node; 1.4 CMP of Ru; 1.4.1 Requirements of Ru CMP; 1.4.2 Advances of Ru CMP. 1.4.3 Existing Problems in the CMP of Ru1.5 Main Content of the Thesis; References; 2 Material Removal Mechanism of Cu in KIO4-Based Slurry; 2.1 Experimental; 2.1.1 Static Etch Experiments; 2.1.2 Characterization of Surface Film; 2.1.3 Nano-Scratch Tests; 2.1.4 CMP-Electrochemical Experiments; 2.1.5 Chemical Mechanical Polishing Experiments; 2.2 Analysis of Cu Surface Chemistry; 2.2.1 Thermodynamic Parameters of Electrochemical Reactions; 2.2.2 Characterization of Corrosion Products on Cu; 2.3 Mechanical Properties of Cu Surface Film; 2.3.1 Surface Morphology. 2.3.2 Corrosion-Enhanced Mechanical Abrasion2.4 Chemical Corrosion of Cu; 2.4.1 Static Etching of Cu; 2.4.2 Mechanical Abrasion-Enhanced Chemical Corrosion of Cu; 2.5 Material Removal Mechanism of Cu; 2.6 Conclusions; References; 3 Material Removal Mechanism of Ru in KIO4-Based Slurry; 3.1 Experimental; 3.1.1 Sample Preparations; 3.1.2 Electrochemical Measurement; 3.1.3 Analysis of Surface Chemistry in Micro-Region; 3.1.4 CMP-Electrochemical Experiments; 3.2 Ru Surface Chemistry Analysis; 3.2.1 Thermodynamic Parameters of Electrochemical Reactions. 3.2.2 Characterization of Corrosion Products on Ru3.3 Thickness of the Passive Film on Ru Surface; 3.4 The Corrosion Properties of Ru; 3.4.1 Passivation Properties of Ru; 3.4.2 The Corrosion Kinetics of Ru; 3.5 The CMP Mechanism of Ru; 3.6 Conclusions; References; 4 Tribocorrosion Investigations of Cu/Ru Interconnect Structure During CMP; 4.1 Experimental; 4.1.1 Tribocorrosion Experiments; 4.1.2 The CMP-Electrochemical Experiments; 4.2 Tribocorrosion Properties of Cu in KIO4-Based Solution; 4.2.1 Comparison Between the Wear Track and Unworn Surface; 4.2.2 The Electrochemical Signals. 4.3 Abrasion-Accelerated Corrosion of Cu During CMP4.4 Tribocorrosion Properties of Ru in KIO4-Based Solution; 4.5 Abrasion-Accelerated Corrosion of Ru During CMP; 4.6 Conclusions; References; 5 Micro-galvanic Corrosion of Cu/Ru Couple in KIO4 Solution; 5.1 Experimental; 5.1.1 Sample Preparation; 5.1.2 Confocal Raman Microscopy Analysis; 5.1.3 KFM Mapping and In-situ AFM Measurements; 5.1.4 Electrochemical Experiments; 5.2 Corrosion Tendency of the Metal Components; 5.3 Corrosion Products Analysis; 5.4 Electrochemical Behavior of the Cu/Ru Couple; 5.4.1 Corrosion Tendency in KIO4 Solution.
Series Title: Springer theses.
Responsibility: Jie Cheng.

Abstract:

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material.  Read more...

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