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Smart writing of programmable metallization cell

Author: Rizu Raval
Publisher: [Long Beach, California] : California State University, Long Beach, 2018.
Dissertation: M.S. California State University, Long Beach 2018
Series: California State University, Long Beach.; Master's thesis collection, Department of Electrical Engineering.
Edition/Format:   Thesis/dissertation : Thesis/dissertation : eBook   Computer File : English
Summary:
Abstract: In this project, a controller for performing smart writing on programmable metallization cell (PMC) is designed. The controller performs smart writing in two steps: first, data from the PMC cell is read and compared with input data; second, data is written into the PMC cell. The controller compares input data and in-cell data to determine the voltage across PMC. If input data is different from in-cell data  Read more...
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Details

Genre/Form: Academic theses
Material Type: Thesis/dissertation, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Rizu Raval
ISBN: 9780438148307 0438148304
OCLC Number: 1057287670
Description: 1 online resource (x, 60 pages) : illustrations (some color)
Series Title: California State University, Long Beach.; Master's thesis collection, Department of Electrical Engineering.
Responsibility: by Rizu Raval.

Abstract:

Abstract: In this project, a controller for performing smart writing on programmable metallization cell (PMC) is designed. The controller performs smart writing in two steps: first, data from the PMC cell is read and compared with input data; second, data is written into the PMC cell. The controller compares input data and in-cell data to determine the voltage across PMC. If input data is different from in-cell data and input data is logic 1, then voltage across PMC is set to +0.8V. Similarly, if input data is different from in-cell data and input data is logic 0, then voltage across PMC is changed to -0.5V. If input data and in-cell data are the same, then voltage across PMC is set to 0V. For reading operation, voltage across PMC is set to 0.1V and PMC current is compared to reference current. Simulation results demonstrate that the controller successfully performs smart writing and reading in every scenario mentioned above. Such features are unique among prevailing memory controllers and reduce the energy consumption of the controller.

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