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Theory of electronic and optical properties of atomically thin films of indium selenide

Author: Samuel J Magorrian
Publisher: Cham : Springer, [2019]
Series: Springer theses.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Magorrian, Samuel J.
Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide.
Cham : Springer, ©2019
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Samuel J Magorrian
ISBN: 9783030257156 3030257150
OCLC Number: 1112425688
Description: 1 online resource (96 pages)
Contents: Intro; Supervisor's Foreword; Abstract; Acknowledgements; Contents; 1 Introduction; 1.1 Introduction; 1.2 Crystal Structure of Monolayer and Bulk InSe; 1.3 Electronic and Optical Properties: Bulk Crystal; 1.4 Few-Layer and Monolayer Ultrathin Films; 1.5 Density Functional Theory Bands for Monolayer InSe; 1.6 Other Layered Hexagonal III-VI Semiconductors; References; 2 Tight-Binding Model; 2.1 Tight-Binding Model for Monolayer InSe; 2.1.1 Hamiltonian; 2.1.2 Parametrisation of Hamiltonian with Scissor Correction; 2.2 Multilayer Films; 2.2.1 Bilayer Hamiltonian and Parametrisation 3.4.1 Quantisation of Bulk InSe Bands in Ultrathin Films3.4.2 Intersubband Optical Transitions; 3.4.3 Effects of Interlayer Screening in Gated n-Doped InSe; 3.4.4 Dual Gating; 3.4.5 Experimental Realisation of Intersubband Transitions; References; 4 Spin-Orbit Coupling Effects in InSe Films; 4.1 Modelling of Spin-Orbit Coupling; 4.1.1 Spin-Orbit Coupling in the Tight-Binding Model; 4.1.2 Hybrid kcdotp Tight-Binding Theory; 4.2 Rashba Spin-Orbit Coupling; 4.2.1 Rashba Splitting in the Hybrid kcdotp Tight-Binding Model; 4.2.2 Electrostatic Doping 4.3 Selection Rules for Interband Optical Transitions4.3.1 Hybrid kcdotp Tight-Binding Theory; 4.3.2 Optical Absorption Including SOC in the Tight-Binding Model; 4.3.3 Optical Pumping of Nuclear Spin Polarisation; References; 5 Conclusions; References; Curriculum Vitae
Series Title: Springer theses.
Responsibility: Samuel J. Magorrian.

Abstract:

This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in the bulk form, with a strong band gap variation with film thickness predicted and recently observed in optical experiments. The proposed theory is based on a specially designed hybrid k.p tight-binding model approach (HkpTB), which uses an intralayer k.p Hamiltonian to describe the InSe monolayer, and tight-binding-like interlayer hopping. Electronic and optical absorption spectra are determined, and a detailed description of subbands of electrons in few-layer films and the influence of spin-orbit coupling is provided. The author shows that the principal optical excitations of InSe films with the thickness from 1 to 15 layers broadly cover the visible spectrum, with the possibility of extending optical functionality into the infrared and THz range using intersubband transitions.

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