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UV solid-state light emitters and detectors : proceedings of the NATO Advanced Research Workshop, held in Vilnius, 17-21 June, 2003

Author: Michael Shur; Arturas Zukauskas
Publisher: Dordrecht ; London : Kluwer Academic, 2004.
Series: NATO science series., 2, mathematics, physics and chemistry ;, v. 144.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
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Proceedings of the NATO Advanced Research Workshop, held in Vilnius, 17-21 June, 2003

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Genre/Form: Conference papers and proceedings
Congresses
Material Type: Conference publication
Document Type: Book
All Authors / Contributors: Michael Shur; Arturas Zukauskas
ISBN: 1402020341 9781402020346 140202035X 9781402020353
OCLC Number: 56461560
Notes: Includes index.
Description: 322 pages.
Contents: Contributing Authors. Preface. Basic Device Issues in UV Solid-State Emitters and Detectors; M.S. Shur, A. Zukauskas.HVPE-Grown AlN-GaN Based Structures for UV Spectral Region; A.S. Usikov, et al.GaN-Based Laser Diodes; S. Einfeldt, et al. Quaternary AlInGaN Materials System for UV Optoelectronics; E. Kuokstis, et al. III-Nitride Based UV Light Emitting Diodes; R. Gaska, et al. UV Metal Semiconductor Metal Detectors; J.-L. Reverchon, et al. Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing Techniques; K. Jarasiunas. Quantum Phosphors; A.P. Vink, et al. Optical Measurements Using Light-Emitting Diodes; A. Zukauskas, et al. Novel AlGaN Heterostructures for UV Sensors and LEDs; M. Stutzmann. Nitride Photodetectors in UV Biological Effects Studies; E. Munoz, et al. Promising Results of Plasma Assisted MBE for Optoelectronic Applications; A. Georgakilas, et al. Low Dislocations Density GaN/Sapphire for Optoelectronic Devices; B. Beaumont, et al. Stimulated Emission and Gain in GaN Epilayers Grown on Si; A.L. Gurskii, et al.Materials Characterization of Group-III Nitrides under High-Power Photoexcitation; S. Jursenas, et al. Small Internal Electric Fields in Quaternary InAlGaN Heterostructures; S. Anceau, et al.MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range; W.V. Lundin, et al. Gallium Nitride Schottky Barriers and MSM UV Detectors; B. Boratynski, M. Tlaczala.III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors; D. Ciplys, et al. Optically Pumped InGaN/GaN/AlGaN MQW Laser Structures; V.Yu. Ivanov, et al. High Power LED and Thermal Management; A. Mahlkow. Detection of Blue Light by Self-Assembled Monolayer of Dipolar Molecules; O. Nielands, et al. Atomic and Molecular Spectroscopy with UV and Visible Superbright LEDs; G. Pichler, et al. Semi-Insulating GaN and its First Tests for RadiationHardness as an Ionizing Radiation Detector; J.V. Vaitkus, et al. Towards the Hybrid Biosensors Based on Biocompatible Conducting Polymers; A. Ramanaviciene, A. Ramanavicius. Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures; G.P. Yablonskii, et al. Key Word Index. Author Index.
Series Title: NATO science series., 2, mathematics, physics and chemistry ;, v. 144.
Responsibility: edited by Michael S. Shur and Arturas Zukauskas.

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