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Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies

Author: V V EmtsevN V AbrosimovV V KozlovskiG A OganesyanD S PoloskinAll authors
Edition/Format:   Downloadable article   Computer File : English
Publication:Semiconductors, volume:54 number:1 day:3 month:3 year:2020 pages:46-54 date:1.2020
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Material Type: Internet resource
Document Type: Internet Resource, Article, Computer File
All Authors / Contributors: V V Emtsev; N V Abrosimov; V V Kozlovski; G A Oganesyan; D S Poloskin; SpringerLink (Online service)
ISSN:1090-6479
OCLC Number: 1196484862
Description: Online-Ressource online resource.
Responsibility: by V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. Poloskin

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